PART |
Description |
Maker |
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
HT23C010 23C010 |
From old datasheet system CMOS 128K x 8-Bit Mask ROM(CMOS 128K x 8位掩模式ROM) 的CMOS 128K的8位掩模ROM28K的的CMOS × 8位掩模式光盘 CMOS 128K 8-Bit Mask ROM CMOS 128K? 8-Bit Mask ROM CMOS 128K′ 8-Bit Mask ROM
|
Holtek Semiconductor, Inc. HOLTEK[Holtek Semiconductor Inc]
|
IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
UT62L12816BS-70LI UT62L12816BS-70LLI UT62L12816BS- |
128K x 16 BIT LOW POWER CMOS SRAM
|
UTRON Technology
|
LY6212816 LY6212816GV LY6212816LL LY6212816LLE LY6 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS616LV201606 BS616LV1010ECG70 BS616LV1010DIG55 BS |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconductor
|
EM621FR8ES-45LF EM681FR8ES-45LF EM622FR8ES-45LF EM |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
EM610FV8S |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K6T1008C2C K6T1008C2C-B K6T1008C2C-DB55 K6T1008C2C |
128K x8 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
MX27C1000PI-70 MX27C1000QI-70 MX27C1000MI-55 MX27C |
Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125 Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125 FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 128K X 8 OTPROM, 90 ns, PDSO32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 70 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|